BSZ110N06NS3GATMA1

Infineon Technologies

Product No:

BSZ110N06NS3GATMA1

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Package:

PG-TSDSON-8

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Description:

MOSFET N-CH 60V 20A 8TSDSON

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In Stock : 13186

Update Time: 2024-07-19 18:12:01

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Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 23µA
Base Product Number	BSZ110
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	11mOhm @ 20A, 10V
Power Dissipation (Max)	2.1W (Ta), 50W (Tc)
Supplier Device Package	PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)