Home / FET, MOSFET Arrays / FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1
detaildesc

FF11MR12W1M1B11BOMA1

Infineon Technologies

Product No:

FF11MR12W1M1B11BOMA1

Manufacturer:

Infineon Technologies

Package:

Module

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 1200V 100A MODULE

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Update Time: -

Please send RFQ , we will respond immediately.

Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolSiC™+
Package Tray
Technology Silicon Carbide (SiC)
FET Feature -
Power - Max -
Configuration 2 N-Channel (Dual)
Mounting Type Chassis Mount
Package / Case Module
Product Status Obsolete
Vgs(th) (Max) @ Id 5.55V @ 40mA
Base Product Number FF11MR12
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 15V
Supplier Device Package Module
Gate Charge (Qg) (Max) @ Vgs 250nC @ 15V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 7950pF @ 800V
Current - Continuous Drain (Id) @ 25°C 100A