G10N10A

Goford Semiconductor

Product No:

G10N10A

Manufacturer:

Package:

TO-252

Batch:

Datasheet:

Description:

N100V,RD(MAX)130MOHM@10V,TO-252

Quantity:

Delivery:

Payment:

In Stock : 4837

Update Time: 2024-07-19 18:12:01

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 2A, 10V
Power Dissipation (Max)	28W (Ta)
Supplier Device Package	TO-252
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	690 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)