GC11N65D5
detaildesc

GC11N65D5

Goford Semiconductor

Product No:

GC11N65D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

pdf

Description:

N650V, 11A,RD<360M@10V,VTH2.5V~4

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 3155

Update Time: 2024-07-19 18:11:51

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.5865

    $1.5865

  • 10

    $1.3167

    $13.167

  • 100

    $1.047755

    $104.7755

  • 500

    $0.886578

    $443.289

  • 1000

    $0.752248

    $752.248

  • 2000

    $0.714638

    $1429.276

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Product Information

Parameter Info

Product Details

User Guide

Mfr Goford Semiconductor
Series G
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Power Dissipation (Max) 78W (Tc)
Supplier Device Package 8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)