IPB60R299CPAATMA1
detaildesc

IPB60R299CPAATMA1

Infineon Technologies

Product No:

IPB60R299CPAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 11A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 2

Update Time: 2024-07-19 18:12:06

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.1825

    $3.1825

  • 10

    $2.67615

    $26.7615

  • 100

    $2.164955

    $216.4955

  • 500

    $1.924377

    $962.1885

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 440µA
Base Product Number IPB60R299
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Power Dissipation (Max) 96W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)