IPD090N03LGATMA1
detaildesc

IPD090N03LGATMA1

Infineon Technologies

Product No:

IPD090N03LGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 40A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 96752

Update Time: 2024-07-19 18:12:01

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.722

    $0.722

  • 10

    $0.63935

    $6.3935

  • 100

    $0.490105

    $49.0105

  • 500

    $0.387448

    $193.724

  • 1000

    $0.309956

    $309.956

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Base Product Number IPD090
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Power Dissipation (Max) 42W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)