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IPG20N06S2L35ATMA1
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IPG20N06S2L35ATMA1

Infineon Technologies

Product No:

IPG20N06S2L35ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-4

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 55V 20A 8TDSON

Quantity:

Delivery:

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Payment:

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In Stock : 15000

Update Time: 2024-07-19 18:11:53

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2065

    $1.2065

  • 10

    $1.0754

    $10.754

  • 100

    $0.838375

    $83.8375

  • 500

    $0.692569

    $346.2845

  • 1000

    $0.546772

    $546.772

  • 2000

    $0.510321

    $1020.642

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 65W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 27µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 35mOhm @ 15A, 10V
Supplier Device Package PG-TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 55V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A