IPN60R2K1CEATMA1
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IPN60R2K1CEATMA1

Infineon Technologies

Product No:

IPN60R2K1CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 3.7A SOT223

Quantity:

Delivery:

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Payment:

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In Stock : 2660

Update Time: 2024-07-19 18:11:53

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.589

    $0.589

  • 10

    $0.50065

    $5.0065

  • 100

    $0.347795

    $34.7795

  • 500

    $0.271529

    $135.7645

  • 1000

    $0.220694

    $220.694

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolMOS™ CE
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 60µA
Base Product Number IPN60R2
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.1Ohm @ 800mA, 10V
Power Dissipation (Max) 5W (Tc)
Supplier Device Package PG-SOT223-3
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)