IPS12CN10LG

Infineon Technologies

Product No:

IPS12CN10LG

Manufacturer:

Package:

PG-TO251-3-11

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Update Time: -

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	OptiMOS™2
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 83µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	12mOhm @ 69A, 10V
Power Dissipation (Max)	125W (Tc)
Supplier Device Package	PG-TO251-3-11
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	5600 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	69A (Tc)