IPT039N15N5ATMA1

Infineon Technologies

Product No:

IPT039N15N5ATMA1

Manufacturer:

Package:

PG-HSOF-8

Batch:

Datasheet:

Description:

OPTIMOS 5 POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Update Time: -

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Product Status	Active
Vgs(th) (Max) @ Id	4.6V @ 257µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Power Dissipation (Max)	3.8W (Ta), 319W (Tc)
Supplier Device Package	PG-HSOF-8
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Drain to Source Voltage (Vdss)	150 V
Input Capacitance (Ciss) (Max) @ Vds	7700 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 190A (Tc)