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NSB8MTHE3_B/P
Vishay General Semiconductor - Diodes Division
Product No:
NSB8MTHE3_B/P
Manufacturer:
Package:
TO-263AB (D²PAK)
Batch:
-
Datasheet:
Description:
DIODE GEN PURP 1KV 8A TO263AB
Quantity:
Delivery:
Payment:
In Stock : 2000 
Update Time: 2024-07-19 18:12:33
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.33
$1.33
10
$1.18845
$11.8845
100
$0.926915
$92.6915
500
$0.765681
$382.8405
1000
$0.604485
$604.485
2000
$0.564186
$1128.372
5000
$0.53598
$2679.9
10000
$0.515831
$5158.31
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Base Product Number | NSB8 |
| Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
| Supplier Device Package | TO-263AB (D²PAK) |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 8 A |
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