RJ1P10BBHTL1

Rohm Semiconductor

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RJ1P10BBHTL1

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Package:

TO-263AB

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Description:

NCH 100V 170A, TO-263AB, POWER M

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Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	3mOhm @ 90A, 10V
Power Dissipation (Max)	189W (Ta)
Supplier Device Package	TO-263AB
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	8600 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	170A (Ta), 105A (Tc)