RQ3E100BNTB1

Rohm Semiconductor

Product No:

RQ3E100BNTB1

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Package:

8-HSMT (3.2x3)

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Description:

NCH 30V 21A POWER MOSFET: RQ3E10

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In Stock : 5652

Update Time: 2024-07-19 18:12:02

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Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Base Product Number	RQ3E100
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	10.4mOhm @ 10A, 10V
Power Dissipation (Max)	2W (Ta), 15W (Tc)
Supplier Device Package	8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 21A (Tc)