31DF6 B0G
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31DF6 B0G

Taiwan Semiconductor Corporation

Product No:

31DF6 B0G

Package:

DO-201AD

Batch:

-

Datasheet:

pdf

Description:

DIODE GEN PURP 600V 3A DO201AD

Quantity:

Delivery:

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User Guide

Mfr Taiwan Semiconductor Corporation
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Bulk
Technology Standard
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Product Status Active
Base Product Number 31DF6
Capacitance @ Vr, F -
Supplier Device Package DO-201AD
Reverse Recovery Time (trr) 35 ns
Current - Reverse Leakage @ Vr 20 µA @ 600 V
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3A
Operating Temperature - Junction -40°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A