5HN02N

onsemi

Product No:

5HN02N

Manufacturer:

Package:

3-NP

Batch:

Datasheet:

Description:

5HN02 - N-CHANNEL SILICON MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Update Time: -

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	onsemi
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.4V @ 100µA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	2.3Ohm @ 100mA, 10V
Power Dissipation (Max)	400mW (Ta)
Supplier Device Package	3-NP
Gate Charge (Qg) (Max) @ Vgs	1.86 nC @ 10 V
Drain to Source Voltage (Vdss)	50 V
Input Capacitance (Ciss) (Max) @ Vds	22 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)