BSC018NE2LSIATMA1
detaildesc

BSC018NE2LSIATMA1

Infineon Technologies

Product No:

BSC018NE2LSIATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-6

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 25V 29A/100A TDSON

Quantity:

Delivery:

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Payment:

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In Stock : 9750

Update Time: 2024-07-19 18:12:01

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.387

    $1.387

  • 10

    $1.23785

    $12.3785

  • 100

    $0.96482

    $96.482

  • 500

    $0.797031

    $398.5155

  • 1000

    $0.629242

    $629.242

  • 2000

    $0.58729

    $1174.58

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Base Product Number BSC018
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.8mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Supplier Device Package PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Drain to Source Voltage (Vdss) 25 V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc)