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BSZ16DN25NS3GATMA1
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BSZ16DN25NS3GATMA1

Infineon Technologies

Product No:

BSZ16DN25NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 10.9A 8TSDSON

Quantity:

Delivery:

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Payment:

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In Stock : 4990

Update Time: 2024-07-19 18:11:52

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.0235

    $2.0235

  • 10

    $1.6815

    $16.815

  • 100

    $1.33855

    $133.855

  • 500

    $1.132609

    $566.3045

  • 1000

    $0.961001

    $961.001

  • 2000

    $0.91295

    $1825.9

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 32µA
Base Product Number BSZ16DN25
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 165mOhm @ 5.5A, 10V
Power Dissipation (Max) 62.5W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 11.4 nC @ 10 V
Drain to Source Voltage (Vdss) 250 V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)