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FF6MR12W2M1HPB11BPSA1
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FF6MR12W2M1HPB11BPSA1

Infineon Technologies

Product No:

FF6MR12W2M1HPB11BPSA1

Manufacturer:

Infineon Technologies

Package:

Module

Batch:

-

Datasheet:

-

Description:

LOW POWER EASY

Quantity:

Delivery:

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Product Details

User Guide

Mfr Infineon Technologies
Series HEXFET®
Package Tray
Technology Silicon Carbide (SiC)
FET Feature Silicon Carbide (SiC)
Power - Max -
Configuration 2 N-Channel
Mounting Type Chassis Mount
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 5.55V @ 80mA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.63mOhm @ 200A, 15V
Supplier Device Package Module
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
Drain to Source Voltage (Vdss) 1200V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C 200A (Tj)