FQD5P10TM

onsemi

Product No:

FQD5P10TM

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Package:

TO-252AA

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Mfr	onsemi
Series	QFET®
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.05Ohm @ 1.8A, 10V
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
Supplier Device Package	TO-252AA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)