GAN3R2-100CBEAZ
detaildesc

GAN3R2-100CBEAZ

Nexperia USA Inc.

Product No:

GAN3R2-100CBEAZ

Manufacturer:

Nexperia USA Inc.

Package:

8-WLCSP (3.5x2.13)

Batch:

-

Datasheet:

pdf

Description:

100 V, 3.2 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

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Payment:

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In Stock : 1379

Update Time: 2024-07-19 18:11:57

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.0825

    $5.0825

  • 10

    $4.2693

    $42.693

  • 100

    $3.4542

    $345.42

  • 500

    $3.0704

    $1535.2

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Product Information

Parameter Info

Product Details

User Guide

Mfr Nexperia USA Inc.
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +6V, -4V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-XFBGA, WLCSP
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 9mA
Base Product Number GAN3R2
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 5V
Power Dissipation (Max) 394W
Supplier Device Package 8-WLCSP (3.5x2.13)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 60A