GC20N65Q

Goford Semiconductor

Product No:

GC20N65Q

Manufacturer:

Package:

TO-247

Batch:

Datasheet:

Description:

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Quantity:

Delivery:

Payment:

In Stock : 35

Update Time: 2024-07-19 18:12:01

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	170mOhm @ 10A, 10V
Power Dissipation (Max)	151W (Tc)
Supplier Device Package	TO-247
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1724 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)