GT025N06AT
detaildesc

GT025N06AT

Goford Semiconductor

Product No:

GT025N06AT

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

pdf

Description:

N60V, 170A,RD<2.5M@10V,VTH1.2V~2

Quantity:

Delivery:

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Payment:

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In Stock : 99

Update Time: 2024-07-19 18:12:00

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.6435

    $1.6435

  • 10

    $1.368

    $13.68

  • 100

    $1.08889

    $108.889

  • 500

    $0.921405

    $460.7025

  • 1000

    $0.781802

    $781.802

  • 2000

    $0.74271

    $1485.42

  • 5000

    $0.71479

    $3573.95

  • 10000

    $0.691125

    $6911.25

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Product Information

Parameter Info

Product Details

User Guide

Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 10V
Power Dissipation (Max) 215W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 4954 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)