GT035N10M
detaildesc

GT035N10M

Goford Semiconductor

Product No:

GT035N10M

Manufacturer:

Goford Semiconductor

Package:

TO-263

Batch:

-

Datasheet:

-

Description:

N100V, 190A,RD<3.5M@10V,VTH2V~4V

Quantity:

Delivery:

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In Stock : 724

Update Time: 2024-07-19 18:11:44

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.603

    $2.603

  • 10

    $2.16315

    $21.6315

  • 100

    $1.721305

    $172.1305

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Product Information

Parameter Info

Product Details

User Guide

Mfr Goford Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Power Dissipation (Max) 277W (Tc)
Supplier Device Package TO-263
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 6188 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)