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GT20N135SRA,S1E
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GT20N135SRA,S1E

Toshiba Semiconductor and Storage

Product No:

GT20N135SRA,S1E

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

D-IGBT TO-247 VCES=1350V IC=40A

Quantity:

Delivery:

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Product Information

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Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Gate Charge 185 nC
Power - Max 312 W
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Test Condition 300V, 40A, 39Ohm, 15V
Switching Energy -, 700µJ (off)
Td (on/off) @ 25°C -
Operating Temperature 175°C (TJ)
Supplier Device Package TO-247
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 80 A
Voltage - Collector Emitter Breakdown (Max) 1350 V