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IMBG120R350M1HXTMA1
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IMBG120R350M1HXTMA1

Infineon Technologies

Product No:

IMBG120R350M1HXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-12

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 4.7A TO263

Quantity:

Delivery:

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In Stock : 717

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.1035

    $8.1035

  • 10

    $6.94355

    $69.4355

  • 100

    $5.786165

    $578.6165

  • 500

    $5.105452

    $2552.726

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolSiC™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +18V, -15V
Technology SiCFET (Silicon Carbide)
FET Feature Standard
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 1mA
Base Product Number IMBG120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 468mOhm @ 2A, 18V
Power Dissipation (Max) 65W (Tc)
Supplier Device Package PG-TO263-7-12
Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 800 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)