IMW120R045M1XKSA1
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IMW120R045M1XKSA1

Infineon Technologies

Product No:

IMW120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1.2KV 52A TO247-3

Quantity:

Delivery:

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Payment:

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In Stock : 140

Update Time: 2024-07-19 18:12:01

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $19.4655

    $19.4655

  • 10

    $17.1494

    $171.494

  • 100

    $14.831685

    $1483.1685

  • 500

    $13.441246

    $6720.623

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolSiC™
Package Tube
FET Type N-Channel
Vgs (Max) +20V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Not For New Designs
Vgs(th) (Max) @ Id 5.7V @ 10mA
Base Product Number IMW120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Power Dissipation (Max) 228W (Tc)
Supplier Device Package PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 15V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)