Infineon Technologies
Product No:
IMW65R030M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Batch:
-
Datasheet:
-
Description:
SILICON CARBIDE MOSFET, PG-TO247
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$18.6675
$18.6675
10
$16.5908
$165.908
100
$14.51106
$1451.106
500
$12.382794
$6191.397
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Mfr | Infineon Technologies |
Series | CoolSiC™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | +20V, -2V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 8.8mA |
Base Product Number | IMW65R |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V |
Power Dissipation (Max) | 197W (Tc) |
Supplier Device Package | PG-TO247-3-41 |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |