Home / Single FETs, MOSFETs / IPB65R150CFDAATMA1
IPB65R150CFDAATMA1
detaildesc

IPB65R150CFDAATMA1

Infineon Technologies

Product No:

IPB65R150CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 22.4A D2PAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 486

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.966

    $5.966

  • 10

    $5.35705

    $53.5705

  • 100

    $4.38938

    $438.938

  • 500

    $3.736635

    $1868.3175

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 900µA
Base Product Number IPB65R150
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 150mOhm @ 9.3A, 10V
Power Dissipation (Max) 195.3W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 22.4A (Tc)