IPB65R660CFDAATMA1

Infineon Technologies

Product No:

IPB65R660CFDAATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 650V 6A D2PAK

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In Stock : 2000

Update Time: 2024-07-19 18:11:44

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Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, CoolMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 200µA
Base Product Number	IPB65R660
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	660mOhm @ 3.2A, 10V
Power Dissipation (Max)	62.5W (Tc)
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	543 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)