Home / Single FETs, MOSFETs / IPB70N10S3L12ATMA1
IPB70N10S3L12ATMA1
detaildesc

IPB70N10S3L12ATMA1

Infineon Technologies

Product No:

IPB70N10S3L12ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 70A TO263-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 19900

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7075

    $2.7075

  • 10

    $2.43675

    $24.3675

  • 100

    $1.95833

    $195.833

  • 500

    $1.608939

    $804.4695

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 83µA
Base Product Number IPB70N10
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 11.8mOhm @ 70A, 10V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5550 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)