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IPD100N04S4L02ATMA1
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IPD100N04S4L02ATMA1

Infineon Technologies

Product No:

IPD100N04S4L02ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Batch:

-

Datasheet:

-

Description:

MOSFET N-CHANNEL_30/40V

Quantity:

Delivery:

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Payment:

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In Stock : 2427

Update Time: 2024-07-19 18:11:52

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.451

    $2.451

  • 10

    $2.0349

    $20.349

  • 100

    $1.61937

    $161.937

  • 500

    $1.370242

    $685.121

  • 1000

    $1.162629

    $1162.629

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +20V, -16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 95µA
Base Product Number IPD100
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)