IPD200N15N3GATMA1
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IPD200N15N3GATMA1

Infineon Technologies

Product No:

IPD200N15N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 150V 50A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 56677

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.8025

    $2.8025

  • 10

    $2.51465

    $25.1465

  • 100

    $2.02122

    $202.122

  • 500

    $1.660657

    $830.3285

  • 1000

    $1.37597

    $1375.97

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 90µA
Base Product Number IPD200
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 50A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Drain to Source Voltage (Vdss) 150 V
Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)