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IPD30N06S4L23ATMA2
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IPD30N06S4L23ATMA2

Infineon Technologies

Product No:

IPD30N06S4L23ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 30A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 1289

Update Time: 2024-07-19 18:11:53

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.874

    $0.874

  • 10

    $0.76855

    $7.6855

  • 100

    $0.58938

    $58.938

  • 500

    $0.465937

    $232.9685

  • 1000

    $0.372742

    $372.742

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 10µA
Base Product Number IPD30N06
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 23mOhm @ 30A, 10V
Power Dissipation (Max) 36W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)