Infineon Technologies
Product No:
IPD65R660CFDATMA2
Manufacturer:
Package:
PG-TO252-3-313
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 700V 6A TO252-3-313
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.634
$1.634
10
$1.3585
$13.585
100
$1.08148
$108.148
500
$0.915078
$457.539
1000
$0.776426
$776.426
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Mfr | Infineon Technologies |
Series | CoolMOS™ CFD2 |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Base Product Number | IPD65R660 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
Power Dissipation (Max) | 63W (Tc) |
Supplier Device Package | PG-TO252-3-313 |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
Drain to Source Voltage (Vdss) | 700 V |
Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |