IPD80R1K0CEATMA1

Infineon Technologies

Product No:

IPD80R1K0CEATMA1

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Package:

PG-TO252-3

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Description:

MOSFET N-CH 800V 5.7A TO252-3

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Mfr	Infineon Technologies
Series	CoolMOS™ CE
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 250µA
Base Product Number	IPD80R1
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	950mOhm @ 3.6A, 10V
Power Dissipation (Max)	83W (Tc)
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	785 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)