IPDD60R190G7XTMA1
detaildesc

IPDD60R190G7XTMA1

Infineon Technologies

Product No:

IPDD60R190G7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-10-1

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 13A HDSOP-10

Quantity:

Delivery:

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Payment:

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In Stock : 167

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.0115

    $3.0115

  • 10

    $2.527

    $25.27

  • 100

    $2.04402

    $204.402

  • 500

    $1.816913

    $908.4565

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolMOS™ G7
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 10-PowerSOP Module
Product Status Active
Vgs(th) (Max) @ Id 4V @ 210µA
Base Product Number IPDD60
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 4.2A, 10V
Power Dissipation (Max) 76W (Tc)
Supplier Device Package PG-HDSOP-10-1
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 718 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)