IPI60R165CPXKSA1
detaildesc

IPI60R165CPXKSA1

Infineon Technologies

Product No:

IPI60R165CPXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

-

Datasheet:

-

Description:

HIGH POWER_LEGACY

Quantity:

Delivery:

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Payment:

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In Stock : 500

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.187

    $5.187

  • 10

    $4.3586

    $43.586

  • 100

    $3.52602

    $352.602

  • 500

    $3.134259

    $1567.1295

  • 1000

    $2.683712

    $2683.712

  • 2000

    $2.527

    $5054

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series CoolMOS®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 790µA
Base Product Number IPI60R165
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 165mOhm @ 12A, 10V
Power Dissipation (Max) 192W (Tc)
Supplier Device Package PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)