IPP096N03LGHKSA1

Infineon Technologies

Product No:

IPP096N03LGHKSA1

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Package:

PG-TO220-3-1

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Description:

N-CHANNEL POWER MOSFET

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In Stock : 13100

Update Time: 2024-07-19 18:12:14

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Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	9.6mOhm @ 30A, 10V
Power Dissipation (Max)	42W (Tc)
Supplier Device Package	PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)