IPP60R299CPXKSA1

Infineon Technologies

Product No:

IPP60R299CPXKSA1

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Package:

PG-TO220-3

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Description:

MOSFET N-CH 650V 11A TO220-3

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In Stock : 307

Update Time: 2024-07-19 18:11:40

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Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 440µA
Base Product Number	IPP60R299
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	299mOhm @ 6.6A, 10V
Power Dissipation (Max)	96W (Tc)
Supplier Device Package	PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)