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IPP65R115CFD7AAKSA1
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IPP65R115CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R115CFD7AAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 21A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 27

Update Time: 2024-07-19 18:11:40

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $6.0515

    $6.0515

  • 10

    $5.08155

    $50.8155

  • 100

    $4.11122

    $411.122

  • 500

    $3.654384

    $1827.192

  • 1000

    $3.129072

    $3129.072

  • 2000

    $2.946358

    $5892.716

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™ CFD7
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 490µA
Base Product Number IPP65R115
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 115mOhm @ 9.7A, 10V
Power Dissipation (Max) 114W (Tc)
Supplier Device Package PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)