IQE022N06LM5CGSCATMA1

Infineon Technologies

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PG-WHTFN-9

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OPTIMOS 5 POWER-TRANSISTOR 60V

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Mfr	Infineon Technologies
Series	OptiMOS™ 5
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	9-PowerWDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 48µA
Base Product Number	IQE022
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	2.2mOhm @ 20A, 10V
Power Dissipation (Max)	2.5W (Ta), 100W (Tc)
Supplier Device Package	PG-WHTFN-9
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	4420 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 151A (Tc)