IRFB4110PBF
detaildesc

IRFB4110PBF

Infineon Technologies

Product No:

IRFB4110PBF

Manufacturer:

Infineon Technologies

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 120A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 6339

Update Time: 2024-12-27 17:32:56

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.123

    $4.123

  • 10

    $3.70215

    $37.0215

  • 100

    $3.03335

    $303.335

  • 500

    $2.582195

    $1291.0975

  • 1000

    $2.177761

    $2177.761

  • 2000

    $2.068872

    $4137.744

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Product Information

Parameter Info

Product Details

User Guide

Mfr Infineon Technologies
Series HEXFET®
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number IRFB4110
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V
Power Dissipation (Max) 370W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 9620 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)