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MSCSM120DHM31CTBL2NG
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MSCSM120DHM31CTBL2NG

Microchip Technology

Product No:

MSCSM120DHM31CTBL2NG

Manufacturer:

Microchip Technology

Package:

-

Batch:

-

Datasheet:

pdf

Description:

PM-MOSFET-SIC-SBD-BL2

Quantity:

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User Guide

Mfr Microchip Technology
Series -
Package Bulk
Technology Silicon Carbide (SiC)
FET Feature -
Power - Max 310W
Configuration 2 N-Channel (Dual) Asymmetrical
Mounting Type Chassis Mount
Package / Case Module
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 1mA
Base Product Number MSCSM120
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Supplier Device Package -
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 79A