NTH4L020N090SC1
detaildesc

NTH4L020N090SC1

onsemi

Product No:

NTH4L020N090SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

-

Datasheet:

pdf

Description:

SILICON CARBIDE MOSFET, NCHANNEL

Quantity:

Delivery:

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Payment:

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In Stock : 320

Update Time: 2024-07-19 18:12:06

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $35.6915

    $35.6915

  • 10

    $31.80505

    $318.0505

  • 100

    $27.916605

    $2791.6605

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Product Information

Parameter Info

Product Details

User Guide

Mfr onsemi
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +22V, -8V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 20mA
Base Product Number NTH4L02
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V
Power Dissipation (Max) 484W (Tc)
Supplier Device Package TO-247-4L
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
Drain to Source Voltage (Vdss) 900 V
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)