onsemi
Product No:
NTH4L060N065SC1
Manufacturer:
Package:
TO-247-4L
Batch:
-
Description:
SIC MOS TO247-4L 650V
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$11.3715
$11.3715
10
$10.0206
$100.206
100
$8.666185
$866.6185
500
$7.853745
$3926.8725
1000
$7.203784
$7203.784
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Mfr | onsemi |
Series | - |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | +22V, -8V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.3V @ 6.5mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 70mOhm @ 20A, 18V |
Power Dissipation (Max) | 176W (Tc) |
Supplier Device Package | TO-247-4L |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 18 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1473 pF @ 325 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |