NTH4L080N120SC1
detaildesc

NTH4L080N120SC1

onsemi

Product No:

NTH4L080N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Batch:

-

Datasheet:

pdf

Description:

SICFET N-CH 1200V 29A TO247-4

Quantity:

Delivery:

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Payment:

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In Stock : 430

Update Time: 2024-07-19 18:12:06

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $13.2715

    $13.2715

  • 10

    $11.6907

    $116.907

  • 100

    $10.110945

    $1011.0945

  • 500

    $9.163073

    $4581.5365

  • 1000

    $8.404754

    $8404.754

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Product Information

Parameter Info

Product Details

User Guide

Mfr onsemi
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +25V, -15V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Base Product Number NTH4L080
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Power Dissipation (Max) 170W (Tc)
Supplier Device Package TO-247-4L
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)