RQ3E180BNTB
detaildesc

RQ3E180BNTB

Rohm Semiconductor

Product No:

RQ3E180BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CHANNEL 30V 39A 8HSMT

Quantity:

Delivery:

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Payment:

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In Stock : 5300

Update Time: 2024-07-19 18:12:17

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.646

    $0.646

  • 10

    $0.56715

    $5.6715

  • 100

    $0.43453

    $43.453

  • 500

    $0.343501

    $171.7505

  • 1000

    $0.274797

    $274.797

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Product Information

Parameter Info

Product Details

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RQ3E180
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.9mOhm @ 18A, 10V
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)