RS1E180BNTB
detaildesc

RS1E180BNTB

Rohm Semiconductor

Product No:

RS1E180BNTB

Manufacturer:

Rohm Semiconductor

Package:

CPT3

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CHANNEL 30V 60A 8-HSOP

Quantity:

Delivery:

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Payment:

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In Stock : 2450

Update Time: 2024-07-19 18:12:03

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.608

    $0.608

  • 10

    $0.5206

    $5.206

  • 100

    $0.36176

    $36.176

  • 500

    $0.282435

    $141.2175

  • 1000

    $0.229558

    $229.558

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Product Information

Parameter Info

Product Details

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RS1E
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.9mOhm @ 18A, 10V
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Supplier Device Package CPT3
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)