SIE812DF-T1-GE3
detaildesc

SIE812DF-T1-GE3

Vishay Siliconix

Product No:

SIE812DF-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

10-PolarPAK® (L)

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 40V 60A 10POLARPAK

Quantity:

Delivery:

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Payment:

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In Stock : 275

Update Time: 2024-07-19 18:11:42

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.154

    $3.154

  • 10

    $2.83195

    $28.3195

  • 100

    $2.32009

    $232.009

  • 500

    $1.975031

    $987.5155

  • 1000

    $1.665692

    $1665.692

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Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SIE812
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Supplier Device Package 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)