SIHB080N60E-GE3
detaildesc

SIHB080N60E-GE3

Vishay Siliconix

Product No:

SIHB080N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

pdf

Description:

E SERIES POWER MOSFET D2PAK (TO-

Quantity:

Delivery:

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Payment:

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In Stock : 773

Update Time: 2024-07-19 18:11:42

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.959

    $4.959

  • 10

    $4.1629

    $41.629

  • 100

    $3.367845

    $336.7845

  • 500

    $2.99364

    $1496.82

  • 1000

    $2.563309

    $2563.309

  • 2000

    $2.413627

    $4827.254

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Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 80mOhm @ 17A, 10V
Power Dissipation (Max) 227W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 2557 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)